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| BAR 81W Silicon RF Switching Diode Preliminary data * Design for use in shunt configuration * High shunt signal isolation * Low shunt insertion loss 3 4 2 1 VPS05605 Type BAR 81W Marking Ordering Code BBs Q62702-A1270 Pin Configuration Package 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 138 C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 30 100 100 150 -55 ...+125 -55 ...+150 Unit V mA mW C C VR IF Ptot Tj Top Tstg RthJA RthJS 200 120 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAR 81W Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Characteristics Reverse current Symbol min. Values typ. 0.93 max. 20 1 nA V Unit IR VF - VR = 20 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.6 0.57 0.7 0.15 - pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance rf Ls nH IF = 5 mA, f = 100 MHz Series inductance Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF Semiconductor Group Semiconductor Group 22 Sep-04-1998 1998-11-01 BAR 81W Forward current IF = f (TA*;TS) *): mounted on alumina 15mm x 16.7mm x 0.7mm 120 mA 100 90 80 TS IF 70 60 50 40 30 20 10 0 0 20 40 60 80 100 TA 120 C 150 TA,TS Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 2 K/W IFmax / IFDC - RthJS 10 2 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -5 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -6 10 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Sep-04-1998 1998-11-01 BAR 81W Forward current IF = f (V F) T A = 25C 10 3 mA Forward resistance rf = f(IF) f = 100MHz 3.0 Ohm 10 2 2.4 2.2 RF 10 1 10 0 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 IF 10 -1 400 500 600 700 800 mV 1000 0.0 -1 10 10 0 mA 10 1 VF IF Diode capacitance CT = f (V R) f = 1MHz Diode capacitance CT = f (VR) f = 100MHz 1.0 pF 1.0 pF 0.8 0.8 CT 0.7 CT V 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0 1 2 3 4 5 6 7 8 10 0.2 0 1 2 3 4 5 6 7 8 V 10 VR VR Semiconductor Group Semiconductor Group 44 Sep-04-1998 1998-11-01 |
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